硒化铋晶体（百分之99.995）Bi2Se3

硒化铋晶体 Bi2Se3（Bismuth Selenide）晶体尺寸：10毫米电学性能：拓扑绝缘体晶体结构：菱面体晶胞参数：a = b = 0.413, c = 2.856 nm, α = β = 90#176;, γ = 120#176;晶体类型：合成晶体纯度：＞99.995%

硒化铋晶体 Bi2Se3(Bismuth Selenide)
晶体尺寸：10毫米
电学性能：拓扑绝缘体
晶体结构：菱面体
晶胞参数：a = b = 0.413, c = 2.856 nm, α = β = 90°, γ = 120°
晶体类型：合成
晶体纯度：＞99.995%

X-ray diffraction on a Bi2Se3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 6 XRD peaks correspond, from left to right, to (00l) with l = 6, 9, 12, 15, 18, 21, 24 

XRD of a single crystal Bi2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

EDX of a single crystal Bi2Se3.

Raman of a single crystal Bi2Se3. Measurement with a 785nm Raman at room temperature.