硒化铟晶体（百分之99.995） In2Se3

硒化铟晶体 In2Se3（Indium Selenide）晶体尺寸：8-10毫米电学性能：半导体晶体结构：六边形晶胞参数：a = b = 0.398 nm, c = 18.89 nm, α = β = 90#176;, γ = 120#176;晶体类型：合成晶体纯度：＞99.995%

硒化铟晶体 In2Se3(Indium Selenide)
晶体尺寸：8-10毫米
电学性能：半导体
晶体结构：六边形
晶胞参数：a = b = 0.398 nm, c = 18.89 nm, α = β = 90°, γ = 120°
晶体类型：合成
晶体纯度：＞99.995%

X-ray diffraction on a 2H-In2Se3 (Indium Selenide) single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 8 XRD peaks correspond, from left to right, to (00l) with l = 4, 6, 8, 10, 12, 14, 16, 18

Powder X-ray diffraction (XRD) of a single crystal In2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal In2Se3 by Energy-dispersive X-ray spectroscopy (EDX).