二硒化铪晶体（百分之99.995）HfSe2

二硒化铪晶体 HfSe2（Hafnium Selenide）晶体尺寸：~10毫米电学性能：半导体晶体结构：六边形晶胞参数：a = b = 0.3745 nm, c = 0.6160 nm, α = β = 90#176;, γ = 120#176;晶体类型：合成晶体纯度：＞99.995%

二硒化铪晶体 HfSe2(Hafnium Selenide)
晶体尺寸：~10毫米
电学性能：半导体
晶体结构：六边形
晶胞参数：a = b = 0.3745 nm, c = 0.6160 nm, α = β = 90°, γ = 120°
晶体类型：合成
晶体纯度：＞99.995%

X-ray diffraction on a Hafnium Diselenide single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 3, 4, 5

Powder X-ray diffraction (XRD) of a single crystal HfSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal HfSe2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal HfSe2. Measurement was performed with a 785 nm Raman system at room temperature.