硫化锗晶体（百分之99.995） GeS

硫化锗晶体 GeS（Germanium Sulfide）晶体尺寸：~10毫米电学性能：半导体晶体结构：斜方晶系晶胞参数：a = 1.450, b = 0.364 nm, c = 0.430 nm, α = β = γ = 90#176;晶体类型：合成晶体纯度：＞99.995%

硫化锗晶体 GeS(Germanium Sulfide)
晶体尺寸：~10毫米
电学性能：半导体
晶体结构：斜方晶系
晶胞参数：a = 1.450, b = 0.364 nm, c = 0.430 nm, α = β = γ = 90°
晶体类型：合成
晶体纯度：＞99.995%

X-ray diffraction on a single crystal GeS aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (h00) with h = 2, 4, 6, 8

Powder X-ray diffraction (XRD) of a single crystal GeS. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal GeS by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal GeS. Measurement was performed with a 785 nm Raman system at room temperature.