二硫化锡晶体（百分之99.995） 2H-SnS2

二硫化锡晶体 2H-SnS2（Tin Sulfide）晶体尺寸：~8毫米电学性能：半导体（~ 2.2ev）晶体结构：六边形晶胞参数：a = b = 0.364, c = 0.589 nm, α = β = 90#176;, γ = 120#176;晶体类型：合成晶体纯度：＞99.995%

二硫化锡晶体 2H-SnS2(Tin Sulfide)
晶体尺寸：~8毫米
电学性能：半导体（~ 2.2ev）
晶体结构：六边形
晶胞参数：a = b = 0.364, c = 0.589 nm, α = β = 90°, γ = 120°
晶体类型：合成
晶体纯度：＞99.995%

X-ray diffraction on a 2H phase Tin Disulfide single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4

Powder X-ray diffraction (XRD) of a single crystal 2H-SnS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal 2H-SnS2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal 2H-SnS2. Measurement was performed with a 785 nm Raman system at room temperature.