二硫化钽晶体（1T/百分之99.995） TaS2

二硫化钽晶体（1T） TaS2（Tantalum Sulfide） -1T晶体尺寸：~8毫米电学性能：半导体，电荷密度波（CDW），Mott相晶体结构：六边形晶胞参数：a = b = 0.336 nm, c = 0.590 nm, α = β = 90#176;, γ = 120#176;晶体类型：合成晶体纯度：＞99.995%

二硫化钽晶体(1T) TaS2(Tantalum Sulfide) -1T
晶体尺寸：~8毫米
电学性能：半导体，电荷密度波（CDW），Mott相
晶体结构：六边形
晶胞参数：a = b = 0.336 nm, c = 0.590 nm, α = β = 90°, γ = 120°
晶体类型：合成
晶体纯度：＞99.995%

X-ray diffraction on a Tantalum Disulfide single crystal aligned along the (001) plane. XRD on the 1T-TaS2 was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4, 5

Powder X-ray diffraction (XRD) of a single crystal 1T-TaS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal 1T-TaS2 by Energy-dispersive X-ray spectroscopy (EDX).