DE400电子束蒸发仪配置一个电子束蒸发源，基片架装于腔体侧面水平转动的轴上，基片可以改变镀膜角度
The DE400 Electron Beam Evaporator is assembled with one e-beam source, the substrate is mounting on the horizontal axial on the side of chamber for the substrate polar to change the deposition angle.
DE400电子束蒸发仪配置一个电子束蒸发源，基片架装于腔体侧面水平转动的轴上，基片可以改变镀膜角度
Configuration
主要配置
| Evaporation Chamber 蒸发腔体 | 304 stainless steel chamber with viewport 蒸发腔体为304不锈钢，并有观察窗 |
| Vacuum Pumping 真空泵 | Cryo-pump or Turbo pump and dry rough pump 蒸发室配备分子泵和无油机械泵 |
| Vacuum Valve 真空阀门 | Pneumatic UHV gate valves 气动控制超高真空插板阀 |
| Evaporation Source 蒸发源 | Multi pocket e-beam source 多坩埚电子束蒸发源 |
| Substrate Chamber 样品室 | 304 stainless steel chamber with viewport 蒸发腔体为304不锈钢，并有观察窗 |
| Sample Stage 样品台 | Side mount polar Substrate 侧面安装的转角样品台 |
| Film Control 膜厚检测 | Crystal Film thickness Monitor and Control 晶振膜厚监控 |
| Vacuum Gauging 真空测量 | Wide range vacuum gauge and rough gauge 宽量程真空计用于测量真空和粗抽计 |
Specification
主要技术指标
| The Base Vacuum Pressure 极限真空度 | better than 9E-9 Torr 优于9E-9托 |
| Sample Loading Capacity 装样能力 | One Max. 4 inch flat substrate 一个zui大4英寸的平板基片 |
| Rate Resolution 蒸发速率分辨率 | 0.05 Angstroms/sec |
| Thickness Resolution = 0.02 Angstroms 膜厚分辨率 | 0.02 Angstroms
|
Features
特点
Unique Design of Substrate Chamber and Sources chamber isolated by UHV gate valve
*的结构设计，基片腔体和蒸发源腔体通过UHV门阀隔开
All Metal Seal, True UHV System
系统采用全金属密封，真正的超高真空系统
Stand along system frameworks and electric rack
独立的系统机架和电器柜
E-beam source Water Interlock
电子束蒸发源冷水安全互锁
Optional Substrate Cooling
样品台可选水冷
For R&D Thin Film Deposition
用于薄膜沉积研发
Ideal tools for LIFT-OFF process
用于LIFT-OFF工艺的理想平台
Ideal tools for GLAD process
用于GLAD工艺的理想平台
Evaporate metal, Semiconductor or Insulation Materials （material depends）
可蒸发金属，半导体或介质材料（视具体材料而定）
Evaporate Magnetic Materials
可蒸发磁性材料
LOAD LOCK
预真空进样室（可选）
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