基于二氧化硅衬底的全区域覆盖单层二硫化钼

参考价	面议

参考价

面议

具体成交价以合同协议为准

公司名称 上海巨纳科技有限公司
品牌
型号
所在地
厂商性质 经销商
更新时间 2020/12/27 1:23:14
访问次数 384

在线询价收藏产品进入展商展台

联系方式：袁经理 13761090949 查看联系方式

联系我们时请说明是仪器网上看到的信息，谢谢!

索取相关资料

促销详情

促销时间：

特价说明：

促销详细：

2020年01月08日至 2020年02月08日

特价促销

模内浇口分离自动化，降低对人的依赖度；传统的塑胶模具开模后产品与浇口相连，需二道工序进行人工剪切分离，模内热切模具将浇口分离提前至开模前，消除后续工序，有利于生产自动化，降低对人的依赖。

产品简介

我也要发布产品信息

This product contains full area coverage MoS2 monolayers on SiO2/Si substrates.

详细信息在线询价

This product contains full area coverage MoS2 monolayers on SiO2/Si substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick MoS2 sheet. Synthesized full area coverage monolayer MoS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness. In comparison to full area coverage MoS2 on sapphire, full area coverage MoS2 on SiO2/Si display higher PL intensity.

Sample Properties.

Sample size	1cm x 1cm square shaped
Substrate type	Thermal oxide (SiO2/Si) substrates
Coverage	Full Coverage Monolayer
Electrical properties	1.85 eV Direct Bandgap Semiconductor
Crystal structure	Hexagonal Phase
Unit cell parameters	a = b = 0.313 nm, c = 1.230 nm, α = β = 90°, γ = 120°
Production method	Atmospheric Pressure Chemical Vapor Deposition (APCVD)
Characterization methods	Raman, photoluminescence, TEM, EDS

Specifications

1) Full coverage * monolayer MoS2 uniformly covered across SiO2/Si substrates.

2) . One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3) Atomically smooth surface with roughness < 0.2 nm.

4) Highly uniform surface morphology. MoS2 monolayers uniformly cover across the SiO2/Si substrates.

5) 99.9995% purity as determined by nano-SIMS measurements

6) Repeatable Raman and photoluminescence response

7) High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8) SiO2/Si substrates. But our research and development team can transfer MoS2 monolayers onto variety of substrates including PET and quartz without significant compromisation of material quality.

9) MoS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected MoS2 using α-bombardment technique.

Supporting datasets [for * Full area coverage on SiO2/Si]

Transmission electron images (TEM) acquired from CVD grown full area coverage MoS2 monolayers on SiO2/Si confirming highly crystalline nature of monolayers

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage MoS2 on SiO2/Si confirming Mo:S 1:2 ratios

Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown full area coverage MoS2 monolayers on SiO2/Si. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.85 eV in agreement with the literature.