基于蓝宝石衬底的全区域覆盖的单层二硒化铼

参考价	面议

参考价

面议

具体成交价以合同协议为准

公司名称 上海巨纳科技有限公司
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更新时间 2020/12/27 1:19:49
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促销详细：

2020年01月08日至 2020年02月08日

特价促销

模内浇口分离自动化，降低对人的依赖度；传统的塑胶模具开模后产品与浇口相连，需二道工序进行人工剪切分离，模内热切模具将浇口分离提前至开模前，消除后续工序，有利于生产自动化，降低对人的依赖。

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This product contains full area coverage ReSe2 monolayers on c-cut sapphire substrates.

详细信息在线询价

This product contains full area coverage ReSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick ReSe2 sheet. Synthesized full area coverage monolayer ReSe2 is highly crystalline, some regions also display significant crystalline anisotropy.

Sample Properties.

Sample size	1cm x 1cm square shaped
Substrate type	Sapphire c-cut (0001)
Coverage	Full monolayer coverage
Electrical properties	1.45 eV Anisotropic Semiconductor (Indirect Bandgap)
Crystal structure	Distorted Tetragonal Phase (1T’)
Unit cell parameters	a = 0.656 nm, b = 0.672 nm, c = 0.674 nm, α = 91.74°, β = 105°, γ = 119°
Production method	Atmospheric Pressure Chemical Vapor Deposition (APCVD)
Characterization methods	Raman, angle resolved Raman spectroscopy, photoluminescence, absorption spectroscopy TEM, EDS

Specifications

ReSe2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected ReSe2 using α-bombardment technique.

Supporting datasets [for * Full area ReSe2 monolayers on c-cut Sapphire]

Transmission electron images (TEM) and angle resolved Raman spectroscopy measurements acquired from CVD grown full area coverage ReSe2 monolayers on c-cut sapphire confirming crystalline anisotropy

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer ReSe2 on c-cut sapphire

Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples. Differential reflectance measurements clearly show bａnd gap at 1.45 eV for monolayer ReS2 consistent with the existing literature values. PL spectrum does not show any PL signal due to indirect bａnd nature.